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| MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L2--MOSV inOne) MP6404 High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications * * * * * * * 4-V gate drivability Small package by full molding (SIP 12 pins) High drain power dissipation (6-device operation) : PT = 36 W (Tc = 25C) Low drain-source ON resistance: RDS (ON) = 120 m (typ.) (Nch) 160 m (typ.) (Pch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = 10 A (max) (VGS = 16 V) IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25C) Drain power dissipation Ta = 25C (6-device operation) Tc = 25C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating Nch 60 60 20 5 20 2.2 4.4 36 129 5 0.22 mJ EART Tch Tstg 0.44 150 -55 to 150 C C 273 -5 Pch -60 -60 20 -5 -20 JEDEC Unit V V V A 2-32C1K JEITA TOSHIBA Weight: 3.9 g (typ.) W PDT EAS IAR W mJ A Single pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 6 device operation Channel temperature Storage temperature range 1 device operation EAR Note 1: Condition for avalanche energy (single pulse) Nch: VDD = 25 V, starting Tch = 25C, L = 7 mH, RG = 25 , IAR = 5 A Pch: VDD = -25 V, starting Tch = 25C, L = 14.84 mH, RG = 25 , IAR = -5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 MP6404 Array Configuration 5 12 4 6 11 3 2 8 7 9 10 1 Thermal Characteristics Characteristics Thermal resistance of channel to ambient (6-device operation, Ta = 25C) Thermal resistance of channel to case (6-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) Rth (ch-c) 3.47 C/W Symbol Max Unit Rth (ch-a) 28.4 C/W TL 260 C 2 2004-07-01 MP6404 Electrical Characteristics (Ta = 25C) (Nch MOS FET) Characteristics Gate leakage current Drain cut-off current Drain source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS 0V 10 V VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min 60 0.8 3.0 VOUT 25 ns 55 Typ. 0.21 0.12 5.0 370 60 180 18 Max 10 100 2.0 0.32 0.16 Unit A A V V S pF pF pF ID = 2.5 A RL = 12 Turn-on time Switching time Fall time ton tf 50 VDD 30 V VIN: tr, tf < 5 ns, duty 1%, tw = 10 s 170 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 5 A 12 8 4 nC nC nC Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR/dt = 50 A/s Min Typ. 70 0.1 Max 5 20 -1.7 Unit A A V ns C 3 2004-07-01 MP6404 Electrical Characteristics (Ta = 25C) (Pch MOS FET) Characteristics Gate leakage current Drain cut-off current Drain source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS -10 V 4.7 0V VDB = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -2.5 A VGS = -10 V, ID = -2.5 A VDS = -10 V, ID =-2.5 A Min -60 -0.8 2.0 ID = -2.5 A RL = 12 VOUT 45 ns 55 Typ. 0.24 0.16 4.0 630 95 290 25 Max 10 -100 -2.0 0.28 0.19 Unit A A V V S pF pF pF Turn-on time Switching time Fall time ton tf VDD -30 V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff VIN: tr, tf < 5 ns, duty 1%, tw = 10 s 200 Qg Qgs Qgd VDD -48 V, VGS = -10 V, ID = -5 A 22 16 6 nC nC nC Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR/dt = 50 A/s Min Typ. 80 0.1 Max -5 -20 1.7 Unit A A V ns C Marking MP6404 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 4 2004-07-01 MP6404 Nch MOS FET ID - VDS 5 10 8 6 4 3.5 20 10 16 8 6 Common source Tc = 25C ID - VDS 4 (A) ID 3 3 2 Common source Tc = 25C 1 VGS = 2.5 V 0 0 ID (A) 12 3.3 4.5 Drain current Drain current 8 4 3.5 4 3 VGS = 2.5 V 0 0 0.4 0.8 1.2 1.6 2.0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 10 V 8 2.0 VDS - VGS Common source (V) Tc = 25C 1.6 (A) ID VDS Drain-source voltage 6 1.2 8 0.8 5 0.4 ID = 2.5 A 4 2 25 Tc = -55C 100 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Drain current Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 20 Common source VDS = 10 V 0.5 RDS (ON) - ID Forward transfer admittance |Yfs| Drain-source on resistance RDS (ON) () 10 0.3 VGS = 4 V 10 0.1 5 3 Tc = -55C 25 100 1 0.05 Common source Tc = 25C 0.5 0.3 0.5 1 3 5 10 30 0.03 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 5 2004-07-01 MP6404 Nch MOS FET RDS (ON) - Tc 0.4 20 Common source 10 5 3 10 3 IDR - VDS RDS(ON) () 0.3 2.5 ID = 4 A 0.2 VGS = 4 V 4 2.5, 1.3 0.1 VGS = 10 V 1.3 Drain-source on resistance Drain reverse current IDR (A) 1 0.5 0.3 Common source Tc = 25C 0.1 0 1 VGS = 0, -1 V 0 -80 -40 0 40 80 120 160 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 2.5 Vth - Tc Common source 1000 Vth (V) (pF) 2.0 VDS = 10 V ID = 1 mA 500 300 Ciss C Gate threshold voltage 100 1.5 Capacitance 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25C 10 0.3 0.5 0.1 Coss 1.0 Crss 0.5 1 3 5 10 30 50 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Dynamic Input/Output Characteristics 80 Common source ID = 5 mA Tc = 25C 60 24 VDS 40 VDD = 48 V VDD = 48 V 8 16 (V) Drain-source voltage VDS 12 24 20 12 VGS 4 0 0 20 40 60 0 80 Total gate charge Qg (nC) Gate-source voltage VGS (V) 12 6 2004-07-01 MP6404 Pch MOS FET ID - VDS -5 Common source Tc = 25C -4 -10 -3 -3 -2 -6 -8 -4 -3.5 -10 -10 -8 -8 -6 -4 Common source Tc = 25C ID - VDS (A) ID ID (A) -6 -3.5 -4 -3 -2 -2.5 VGS = -2V VGS = -2V -2.0 0 0 -2 -4 -6 -8 -10 -2.5 -0.8 -1.2 -1.6 Drain current -1 0 0 -0.4 Drain-source voltage VDS (V) Drain current Drain-source voltage VDS (V) ID - VGS -10 Tc = -55C -8 25 100 Common source VDS = -10 V -2.0 VDS - VGS Common source (V) Tc = 25C -1.6 (A) ID -4 Drain-source voltage -6 VDS -1.2 -0.8 Drain current ID = -5 A -4 -3 -2 -0.4 -2 -1 0 0 ) -2 -4 -6 -8 -10 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 30 Common source 10 5 3 100 1 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 -10 -30 VDS = -10 V 3 Common source Tc = 25C 1 0.5 0.3 RDS (ON) - ID |Yfs| Forward transfer admittance Tc = -55C 25 Drain-source ON resistance RDS (ON) () VGS = -4 V -10 0.1 0.05 0.03 -0.1 -0.3 -0.5 -1 -3 -5 -10 -30 Drain current ID (A) Drain current ID (A) 7 2004-07-01 MP6404 Pch MOS FET RDS (ON) - Tc RDS (ON) () 1.0 Common source -30 Common source IDR - VDS Drain reverse current IDR (A) 0.8 -10 -5 -3 Tc = 25C Drain-source on resistance 0.6 ID = -5 A -2.5 VGS = -4 V -1.2 ID = -5, -2.5, -1.2 A VGS = -10 V 0 -80 -40 0 40 80 120 160 -10 -3 0.4 -1 -0.5 -0.3 0.2 -1 VGS = 0, 1 V -0.1 0 0.4 0.8 1.2 1.6 2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 -2.0 Vth - Tc Vth (V) Gate threshold voltage (pF) -1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1MHz Tc = 25C -0.3 -1 -3 -10 -30 -100 Coss Ciss C Capacitance -1.2 -0.8 Crss 30 -0.1 -0.4 Common source VDS = -10 V ID = -1 mA Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Dynamic Input/Output Characteristics -50 Common source ID = -5 A Tc = 25C VDS -30 -12 VDD = -48 V -24 -12 -20 (V) -40 -16 Drain-source voltage -20 -8 -10 VGS -4 0 0 8 16 24 32 0 40 Total gate charge Qg (nC) Gate-source voltage VGS (V) VDS 8 2004-07-01 MP6404 PDT - Ta 8 (2) 2-device operation (3) 3-device operation 6 (4) 4 (3) (2) 2 (1) (4) 6-device operation Attached on a circuit board Tch - PDT 160 (W) Tch (C) (1) 1-device operation (1) 120 (2) (3) (4) PDT Channel temperature increase Total power dissipation 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 6-device operation 0 0 2 4 6 8 10 Circuit board 0 0 40 80 120 160 200 Ambient temperature Ta (C) Total power dissipation PDT (W) rth - tw 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) (C/W) 100 rth 30 (1) 10 Nch MOS FET (3) (2) Transient thermal resistance 3 1 Pch MOS FET -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 6-device operation 0.01 0.1 1 10 Circuit board 100 1000 0.3 0.1 0.001 Pulse width tw (s) 9 2004-07-01 MP6404 Safe Operating Area (Applicable to Nch MOS FET) 30 ID max 10 s* -30 ID max 10 s* Safe Operating Area (Applicable to Pch MOS FET) 10 10 ms* 100 s* -10 10 ms* 100 s* 1 ms* (A) 100 ms* 3 (A) 1 ms* -3 100 ms* ID Drain current 1 Drain current *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. ID -1 0.3 -0.3 *: Single nonrepetitive pulse Tc = 25C 0.1 1 3 10 30 100 Curves must be derated linearly with increase in temperature. -0.1 -1 -3 -10 -30 -100 Drain-source voltage VDS (V) Drain-source voltage VDS (V) EAS - Tch (Applicable to Nch MOS FET) 200 500 EAS - Tch (Applicable to Pch MOS FET) (mJ) (mJ) EAS Avalanche energy 160 400 EAS 120 300 Avalanche energy 80 200 40 100 0 25 ) 0 25 50 75 100 125 150 50 75 100 125 150 Channel temperature Tch (C) Channel temperature Tch (C) 15 V -15 V BVDSS IAR VDD VDS 15 V -15 V BVDSS IAR VDD VDS Test Cirdcuit Peak IAR = 5 A, RG = 25 VDD = 25 V, L = 7 mH Test Waveform 1 2 B VDSS AS = *L*I * B - VDD 2 VDSS Test Circuit Peak IAR = -5 A, RG = 25 VDD = -25 V, L = 14.84 mH Test Waveform 1 2 B VDSS AS = *L*I * B - VDD 2 VDSS 10 2004-07-01 MP6404 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 11 2004-07-01 |
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